STB11NM60N(2008) データシートの表示（PDF） - STMicroelectronics

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STB11NM60N
(Rev.:2008)

N-channel 600 V - 0.37 Ω- 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

STD11NM60N-1 - STB11NM60N/-1

STD11NM60N-STP11NM60N-STF11NM60N

N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK

DPAK - D2PAK second generation MDmesh™ Power MOSFET

Features

Type

VDSS

(@TJmax)

STB11NM60N-1

STB11NM60N

STD11NM60N

STD11NM60N-1

STF11NM60N

STP11NM60N

650 V

650 V

650 V

650 V

650 V

650 V

RDS(on)

max

0.45 Ω

0.45 Ω

0.45 Ω

0.45 Ω

0.45 Ω

0.45 Ω

ID

10 A

10 A

10 A

10 A

10 A(1)

10 A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices is designed using the

second generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

3

2

1

TO-220

3

1

DPAK

3

2

1

IPAK

123

I²PAK

3

1

D²PAK

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

Marking

STB11NM60N-1

B11NM60N

STB11NM60N

11NM60N

STD11NM60N-1

D11NM60N

STD11NM60N

STP11NM60N

D11NM60N

P11NM60N

STF11NM60N

F11NM60N

March 2008

Rev 4

Package

I²PAK

D²PAK

IPAK

DPAK

TO-220

TO-220FP

Packaging

Tube

Tape and reel

Tube

Tape and reel

Tube

Tube

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