SPB07N60S5 データシートの表示（PDF） - Infineon Technologies

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SPB07N60S5

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPI07N60S5

SPP07N60S5, SPB07N60S5

Forward characteristics of reverse diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

10 2 SPP07N60S5

Typ. gate charge

VGS = f (QGate)

parameter: ID = 7.3 A pulsed

SPP07N60S5

16

V

A

10 1

10 0

10 -1

0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

0.4 0.8 1.2 1.6 2 2.4 V 3

VSD

12

0,2 VDS max

0,8 VDS max

10

8

6

4

2

0

0 4 8 12 16 20 24 28 32nC 38

Qg

7

2002-07-26

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