SP8K80 データシートの表示（PDF） - ROHM Semiconductor
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SP8K80 Datasheet PDF : 7 Pages
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SP8K80
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 500
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
3.0
RDS (on*)
-
Forward transfer admittance
l Yfs l* 0.1
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on) *
-
Rise time
tr *
-
Turn-off delay time
td(off) *
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
Typ.
-
-
-
-
9.0
-
23.5
36.5
2.4
10
18
25
170
3.8
1.3
1.6
Max.
10
-
100
5.0
11.7
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=500V, VGS=0V
V VDS=10V, ID=1mA
ID=0.25A, VGS=10V
S VDS=10V, ID=0.25A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 250V, ID=0.25A
ns VGS=10V
ns RL=1000
ns RG=10
nC VDD 250V
nC ID=0.5A
nC VGS=10V
Body diode characteristics (Source-Drain)
Parameter
Forward voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5
V IS=0.25A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.10 - Rev.A
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