Typical Characteristics
10
I = 400mA
B
9
8
7
6
5
4
3
2
1
0
0
1
I = 300mA I = 250mA
B
B
I = 200mA
B
I = 150mA
B
I = 100mA
B
I = 50mA
B
I = 20mA
B
2
3
4
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characterstic
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
IC= - 5A
0.4
0.8
1.2
I = - 10A
C
1.6
2.0
I [A], BASE CURRENT
B
Figure 3. VCE(sat) vs. IB Characteristics
10
V =4V
CE
8
6
o
Ta = 25 C
4
2
o
Ta = 125 C
Ta = - 25 oC
0
0.0
0.5
1.0
1.5
V [V], Base-Emitter On VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1000
o
Ta = 125 C
o
Ta = 25 C
100
o
Ta = - 25 C
V =4V
CE
10
0.1
1
10
I [A], COLLECTOR CURRENT
C
Figure 2. DC current Gain
1
I = 10 I
C
B
o
Ta = 125 C
0.1
o
Ta = 25 C
o
Ta = - 25 C
0.01
0.01
0.1
1
10
I [A], COLLECTOR CURRENT
C
Figure 4. Collector-Emitter Saturation Voltage
I (Pulse)
C
10
I (DC)
C
t=10ms
t=100ms
1
o
T = 25 C
C
Single Pulse
0.1
10
100
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 6. Forward Bias Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
2
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