SM5009 series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to 85°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min typ max
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2
4.0
–
–
SM5009AN3S, CF5009AN3
HIGH-level output voltage VOH Q: Measurement cct 1, IOH = 16mA SM5009AN4S, CF5009AN4
V
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
3.9
–
–
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
VOL Q: Measurement cct 1, IOL = 16mA
VIH INH
VIL INH
Q: Measurement cct 2, INH = LOW, VOH = VDD
IZ
Q: Measurement cct 2, INH = LOW, VOL = VSS
CF5009AN1
–
–
0.4
V
2.0
–
–
V
–
–
0.8
V
–
–
10
µA
–
–
10
–
12
26
INH = open, Measurement cct 3,
load cct 2, CL = 15pF,
40MHz crystal oscillator
CF5009AN2
CF5009AN3
CF5009AN4
CF5009AN5
–
8
17
–
6
13
–
5
11
–
5
10
CF5009AN6
–
4
9
Current consumption
IDD
INH = open, Measurement cct 3,
load cct 2, CL = 15pF,
40MHz crystal oscillator,
Ta = –20 to +80°C
SM5009AN1S
SM5009AN2S
SM5009AN3S
SM5009AN4S
SM5009AN5S
–
12
26
mA
–
8
17
–
6
13
–
5
11
–
5
10
SM5009AN6S
–
4
9
INH = open, Measurement cct 3, SM5009CN1S, CF5009CN1 –
load cct 2, CL = 15pF,
30MHz crystal oscillator
SM5009CN2S, CF5009CN2 –
10
22
7
15
INH pull-up resistance
Negative resistance
Feedback resistance
Built-in capacitance
RUP Measurement cct 4, VDD = 5V, INH = VSS
−RL VDD = 5V, Ta = 25°C, 40MHz
Rf Measurement cct 5
CG
Design value. A monitor pattern on a wafer is tested.
CD
40
–
200 kΩ
–
–210
–
Ω
0.4
–
1.1 MΩ
5.58
6
6.42 pF
9.3
10 10.7 pF
NIPPON PRECISION CIRCUITS INC.—9