SK200GD066T(2007) データシートの表示（PDF） - Semikron
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SK200GD066T Datasheet PDF : 5 Pages
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SK200GD066T
SEMITOP® 4
IGBT Module
SK200GD066T
Characteristics
Symbol Conditions
Inverse Diode
2 6 2*
6 #;; +? 2( 6 ; 2
2;
==
N
6 #;; +
K 6 #5<5 +KB
2**6 $;;2
=D8FE.
1
Temperature sensor
=!;;
6!;;7* D=#5651HE
8 6 #5 7* %3
8 6 !5; 7* %3
8 6 #5 7*
8 6 !5; 7*
8 6 #5 7*
8 6 !5; 7*
8 6 !#5 7*
min.
typ.
!"04
!"5
;"C5
;"45
$
$"5
4;
#;
$"#
;"4
:;
0C$>5O
max. Units
2
2
2
2
H
H
+
B*
L
MK-
$"5
/
H
Target Data
Features
!"#"$
% &
'
()
*+, -.
/ *
Typical Applications
% 0# 12+
3 !4"5 1-
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GD-T
2
14-09-2007 DIL
© by SEMIKRON
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