SH8M5 データシートの表示（PDF） - ROHM Semiconductor

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SH8M5

4V Drive Nch+Pch MOSFET

ROHM Semiconductor 

SH8M5

N-ch

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±10 μA VGS=±20V, VDS=0V

Drain-source breakdown voltage V(BR) DSS 30

−

−

V ID=1mA, VGS=0V

Zero gate voltage drain current IDSS

−

−

1

μA VDS=30V, VGS=0V

Gate threshold voltage

VGS (th) 1.0

−

2.5

V VDS=10V, ID=1mA

−

Static drain-source on-state

resistance

RDS

∗

(on)

−

−

21 30

ID=6.0A, VGS=10V

30 42 mΩ ID=6.0A, VGS=4.5V

33 47

ID=6.0A, VGS=4V

Forward transfer admittance

Yfs ∗ 4.0

−

−

S ID=6.0A, VDS=10V

Input capacitance

Ciss

− 520 −

pF VDS=10V

Output capacitance

Coss

− 150 −

pF VGS=0V

Reverse transfer capacitance Crss

− 95 − pF f=1MHz

Turn-on delay time

td (on) ∗

−

9

−

ns ID=3A, VDD 15V

Rise time

tr ∗ −

21

−

ns VGS=10V

Turn-off delay time

td (off) ∗

−

36

−

ns RL=5.0Ω

Fall time

tf ∗ −

13

−

ns RG=10Ω

Total gate charge

Qg ∗ −

7.2

−

nC VDD 15V

Gate-source charge

Qgs ∗ −

1.8

−

nC VGS=5V

Gate-drain charge

Qgd ∗ −

2.8

−

nC ID=6.0A

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter

Forward voltage

∗Pulsed

Symbol Min. Typ. Max. Unit

VSD ∗ −

− 1.2 V

Conditions

IS=6.4A, VGS=0V

Data Sheet

www.rohm.com

2/5

○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

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