RJK6012DPP-00-T2 データシートの表示（PDF） - Renesas Electronics

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RJK6012DPP-00-T2

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6012DPP

Preliminary

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

600

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

3.0

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Notes: 5. Pulse test

Typ

—

—

—

—

0.77

1100

110

13

30

22

80

17

30

6.5

14.5

0.88

350

Max

—

1

0.1

4.5

0.92

Unit

V

A

A

V



(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 600 V, VGS = 0

VGS = 30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 5 A, VGS = 10 V Note 5

—

—

—

—

—

—

—

—

—

—

1.50

—

pF VDS = 25 V

pF VGS = 0

pF f = 1 MHz

ns ID = 5 A

ns VGS = 10 V

ns RL = 60 

ns Rg = 10 

nC VDD = 480 V

nC VGS = 10 V

nC ID = 10 A

V IF = 10 A, VGS = 0 Note5

ns IF = 10 A, VGS = 0

diF/dt = 100 A/s

REJ03G1581-0200 Rev.2.00

Jun 30, 2010

Page 2 of 6

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