PUMX2,135 データシートの表示（PDF） - NXP Semiconductors.
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PUMX2,135 Datasheet PDF : 8 Pages
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NXP Semiconductors
PUMX2
NPN/NPN general-purpose double transistors
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max
[1] -
-
694
[1] -
-
417
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
IEBO
collector-base
cut-off current
emitter-base
cut-off current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
VEB = 7 V; IC = 0 A
hFE
VCEsat
DC current gain VCE = 6 V; IC = 1 mA
collector-emitter IC = 50 mA; IB = 5 mA
saturation voltage
fT
transition
VCE = 12 V; IE = 2 mA;
frequency
f = 100 MHz
Cc
collector
VCB = 12 V; IE = ie = 0 A;
capacitance
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
50 μA
-
-
100 nA
120 250 560
-
-
250 mV
100 -
-
MHz
-
-
3
pF
PUMX2_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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