PMPB11EN(2012) データシートの表示（PDF） - NXP Semiconductors.
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PMPB11EN Datasheet PDF : 15 Pages
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NXP Semiconductors
PMPB11EN
30 V N-channel Trench MOSFET
25
ID
(A)
20
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15
10
5
Tj = 150 °C
Tj = 25 °C
0
0
1
VDS > ID × RDSon
2
3
VGS (V)
1.8
a
1.4
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1.0
0.6
-60
0
60
120
180
Tj (°C)
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
2.5
VGS(th)
(V)
2.0
1.5
max
typ
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104
C
(pF)
103
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Ciss
1.0
min
102
Coss
Crss
0.5
0.0
-60
0
60
120
180
Tj (°C)
ID = 0.25 mA; VDS = VGS
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10
10-1
1
10
102
VDS (V)
f = 1 MHz; VGS = 0 V
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB11EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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