PMEG2005EL データシートの表示（PDF） - Philips Electronics

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PMEG2005EL

20 V, 0.5 A very low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package

Philips Electronics 

Philips Semiconductors

PMEG2005EL

20 V, 0.5 A very low VF MEGA Schottky rectifier

[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating will be available on request.

6. Thermal characteristics

Table 6:

Symbol

Rth(j-a)

Thermal characteristics

Parameter

Conditions

thermal resistance from junction in free air

to ambient

Value

[1] [2] 500

Unit

K/W

[1] Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.

[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF (AV) rating will be available on request.

7. Characteristics

Table 7: Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

VF

continuous

see Figure 1

forward voltage

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 100 mA

IF = 500 mA

IR

continuous

VR = 10 V; see Figure 2

reverse current

Cd

diode capacitance VR = 1 V; f = 1 MHz;

see Figure 3

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

Typ

125

185

250

325

450

[1] 4

24

Max

Unit

180

mV

240

mV

290

mV

380

mV

500

mV

30

µA

30

pF

9397 750 12464

Product data sheet

Rev. 01 — 11 February 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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