PMBF4416 データシートの表示（PDF） - Philips Electronics

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PMBF4416

N-channel field-effect transistor

Philips Electronics 

Philips Semiconductors

N-channel field-effect transistor

Product specification

PMBF4416; PMBF4416A

FEATURES

• Low noise

• Interchangeability of drain and

source connections

• High gain.

DESCRIPTION

N-channel symmetrical silicon

junction FETs in a surface-mountable

SOT23 envelope. These devices are

intended for use in VHF/UHF

amplifiers, oscillators and mixers.

handbook, halfpage

3

1

2

Top view

d

g

s

MAM385

PINNING - SOT23

PIN

DESCRIPTION

1 source

2 drain

3 gate

Marking codes:

PMBF4416: P6A.

PMBF4416A: M16.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VDS

drain-source voltage

PMBF4416

PMBF4416A

IDSS

drain-source current

Ptot

VGS(off)

 Yfs 

total power

dissipation

gate-source cut-off

voltage

PMBF4416

PMBF4416A

common-source

transfer admittance

CONDITIONS MIN. MAX. UNIT

−

−

VDS = 15 V;

5

VGS = 0

up to Tamb = 25 °C −

30 V

35 V

15 mA

250 mW

VDS = 15 V;

ID = 1 nA

−

−6 V

−2.5 −6 V

VDS = 15 V;

4.5 7.5 mS

VGS = 0; f = 1 kHz

April 1995

2

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