PBSS8110Z データシートの表示（PDF） - NXP Semiconductors.
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PBSS8110Z Datasheet PDF : 14 Pages
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NXP Semiconductors
8. Test information
IB
90 %
10 %
IC
90 %
PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
IBon (100 %)
input pulse
(idealized waveform)
IBoff
output pulse
(idealized waveform)
IC (100 %)
10 %
td
tr
ton
Fig 13. BISS transistor switching time definition
ts
toff
t
tf
006aaa003
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mlb826
VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A
Fig 14. Test circuit for switching times
PBSS8110Z_2
Product data sheet
Rev. 02 — 8 January 2007
© NXP B.V. 2007. All rights reserved.
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