PBSS8110Z データシートの表示（PDF） - NXP Semiconductors.

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PBSS8110Z

100 V, 1 A NPN low VCEsat (BISS) transistor

NXP Semiconductors. 

NXP Semiconductors

PBSS8110Z

100 V, 1 A NPN low VCEsat (BISS) transistor

7. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max

ICBO

collector-base cut-off VCB = 80 V; IE = 0 A

-

-

100

current

VCB = 80 V; IE = 0 A;

-

-

50

Tj = 150 °C

ICES

collector-emitter cut-off VCE = 80 V;

current

VBE = 0 V

-

-

100

IEBO

emitter-base cut-off

VEB = 4 V; IC = 0 A

-

-

100

current

hFE

DC current gain

VCE = 10 V;

IC = 1 mA

150 -

-

VCE = 10 V;

IC = 250 mA

150 -

500

VCE = 10 V;

IC = 0.5 A

[1] 100

-

-

VCE = 10 V; IC = 1 A [1] 80

-

-

VCEsat

collector-emitter

saturation voltage

IC = 100 mA;

IB = 10 mA

-

-

40

IC = 500 mA;

IB = 50 mA

[1] -

-

120

IC = 1 A;

IB = 100 mA

[1] -

-

200

RCEsat

collector-emitter

saturation resistance

IC = 1 A;

IB = 100 mA

[1] -

160 200

VBEsat

base-emitter saturation IC = 1 A;

voltage

IB = 100 mA

[1] -

-

1.05

VBEon

base-emitter turn-on

VCE = 10 V; IC = 1 A [1] -

-

0.9

voltage

td

delay time

tr

rise time

ton

turn-on time

ts

storage time

VCC = 10 V;

IC = 0.5 A;

IBon = 0.025 A;

IBoff = −0.025 A

tf

fall time

toff

turn-off time

fT

transition frequency

VCE = 10 V;

IC = 50 mA;

f = 100 MHz

-

25

-

-

220 -

-

245 -

-

365 -

-

185 -

-

550 -

100 -

-

Cc

collector capacitance VCB = 10 V;

IE = ie = 0 A;

f = 1 MHz

-

-

7.5

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

Unit

nA

µA

nA

nA

mV

mV

mV

mΩ

V

V

ns

ns

ns

ns

ns

ns

MHz

pF

PBSS8110Z_2

Product data sheet

Rev. 02 — 8 January 2007

© NXP B.V. 2007. All rights reserved.

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