PBYL2025B データシートの表示（PDF） - Philips Electronics
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PBYL2025B Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL2025B series
Forward dissipation, PF (W)
15
Vo = 0.27 V
Rs = 0.00875 Ohms
0.2
10
0.1
PBYL2025
0.5
Tmb(max) / C
127.5
D = 1.0
135
5
I
tp
D
=
tp
T
142.5
T
t
0
150
0
5
10
15
20
25
30
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W)
15
PBYL2025
Tmb(max) / C127.5
Vo = 0.270 V
Rs = 0.00875 Ohms
a = 1.57
2.2 1.9
2.8
10
4
135
5
142.5
0
150
0
5
10
15
20
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
50 IF / A
Tj = 25 C
Tj = 125 C
40
30
PBYR1625
typ
max
20
10
0
0
0.2
0.4
0.6
0.8
1
VF / V
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1A IR / A
150 C
100mA
125 C
10mA 100 C
75 C
1mA
50 C
100uA
Tj = 25 C
10uA
PBYR1625
1uA
0
5
10
15
20
25
VR / V
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
10000 Cd / pF
PBYR1625
1000
100
1
10
100
VR / V
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYL1025
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
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