NCV8535ML250R2G(2019) データシートの表示（PDF） - ON Semiconductor

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NCV8535ML250R2G
(Rev.:2019)

Voltage Regulator - Ultra High Accuracy, Low Iq, Low Dropout, Enable 500 mA

ON Semiconductor 

NCV8535

ELECTRICAL CHARACTERISTICS – 3.3 V

(Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +85°C, unless otherwise noted, Note 6.)

Characteristic

Symbol Min

Typ

Max

Unit

Output Voltage (Accuracy)

Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C

Output Voltage (Accuracy)

Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C

Output Voltage (Accuracy)

Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C

Line Regulation

Vin = 3.7 V to 12 V, Iload = 0.1 mA

Load Regulation

Vin = 3.7 V, Iload = 0.1 mA to 500 mA

Dropout Voltage (See App Note)

Iload = 500 mA

Iload = 300 mA

Iload = 50 mA

Iload = 0.1 mA

Peak Output Current (See Figure 16)

Vout

Vout

Vout

LineReg

−0.9%

3.270

−1.4%

3.254

−1.5%

3.250

LoadReg

VDO

Ipk

500

3.3

3.3

3.3

0.04

0.04

700

+0.9%

3.330

+1.4%

3.346

+1.5%

3.350

V

V

V

mV/V

mV/mA

mV

340

230

110

10

800

mA

Short Output Current (See Figure 16)

Thermal Shutdown

Ground Current

In Regulation

Iload = 500 mA (Note 7)

Iload = 300 mA

Iload = 50 mA

Iload = 0.1 mA

Isc

TJ

IGND

900

mA

160

°C

9.0

14

mA

4.6

7.5

0.8

2.5

−

190

mA

In Dropout

Vin = 3.2 V, Iload = 0.1 mA

−

500

mA

In Shutdown

SD = 0 V

Output Noise

Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF

Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF

Shutdown

Threshold Voltage ON

Threshold Voltage OFF

IGNDsh

Vnoise

0.07

1.0

mA

69

mVrms

46

mVrms

2.0

V

0.4

V

SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin

ISD

0.07

1.0

mA

Output Current In Shutdown Mode, Vout = 0 V

IOSD

0.07

1.0

mA

Reverse Bias Protection, Current Flowing from the Output Pin to GND

IOUTR

10

mA

(Vin = 0 V, Vout_forced = 3.3 V)

6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

7. TA must be greater than 0°C.

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