MRF21045 データシートの表示（PDF） - Motorola => Freescale

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MRF21045

RF Power Field Effect Transistors

Motorola => Freescale 

Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) — continued

Two - Tone Common - Source Amplifier Power Gain

Gps

—

14.9

—

dB

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Two - Tone Drain Efficiency

η

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

—

36

—

%

Intermodulation Distortion

IMD

—

- 30

—

dBc

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Two - Tone Input Return Loss

IRL

—

- 12

—

dB

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Pout, 1 dB Compression Point

(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)

P1dB

—

50

—

W

MOTOROLA RF DEVICE DATA

MRF21045LR3 MRF21045LSR3

For More Information On This Product,

Go to: www.freescale.com

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