MJE13007-TF3-T データシートの表示（PDF） - Unisonic Technologies

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MJE13007-TF3-T

NPN SILICON TRANSISTOR

Unisonic Technologies 

MJE13007

„ TYPICAL CHARACTERISTICS

Figure 2. Base-Emitter Saturation Voltage

1.4

IC/IB=5

1.2

1

IC=-40°C

0.8

25°C

0.6 100°C

0.4

0.01 0.02 0.05 0.1 0.2 0.5 1 2

Collector Current, IC (A)

5 10

NPN SILICON TRANSISTOR

Figure 3. Collector-Emitter Saturation Voltage

10

5

IC/IB=5

2

1

0.5

0.2

0.1

0.05

IC=-40°C

25°C

0.02 100°C

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2

5 10

Collector Current, IC (A)

10000

1000

100

Figure 6. Capacitance

TJ=25°C

Cib

Cob

10

0.1

1

10

100

Reverse Voltage,VR (V)

1000

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Figure 7. Maximum Forward Bias Safe

Operating Area

100

50

Extended SOA@1μs,10μs

20

10

5

2 TC=25°C

1

DC

0.5

1μs

10μs

1ms

5ms

0.2

0.1

0.05

0.02

0.01

10

Bonding wire limit

Thermal limit

Second breakdown limit

curves apply below

rated vceo

20 30 50 70 100 200 300 500 1000

Collector-Emitter Voltage, VCE (V)

5 of 6

QW-R203-019.F

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