MJE13005D(2013) データシートの表示（PDF） - Unisonic Technologies
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MJE13005D Datasheet PDF : 3 Pages
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MJE13005D
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector- Emitter Voltage (VBE =0)
VCES
700
V
Collector-Emitter Voltage (IB =0)
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
Pulse
IC
ICP
4
A
8
A
Base Current
DC
Pulse
IB
IBP
2
A
4
A
TO-220/TO-220F
75
Power Dissipation
TO-251
PD
TO-126/TO-126S
50
W
45
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-251
TO-126/TO-126S
TO-220/TO-220F
Junction to Case
TO-251
TO-126/TO-126S
SYMBOL
θJA
θJC
ELECTRICAL CHARACTERISTICS
RATING
62.5
110
89
1.67
2.5
2.78
UNIT
°C/W
°C/W
PARAMETER
Collector-Emitter Breakdown Voltage
Collector -Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect Cut-off Current
Collect Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Resistive Load
Fall Time
Storage Time
Current Gain Bandwidth Product
Diode Forward Voltage
CLASSIFICATION OF hFE1
RANK
RANGE
A
15 ~ 20
SYMBOL
BVCEO
BVCBO
BVEBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE
VBE(SAT)
tF
tS
fT
VF
TEST CONDITIONS
IC=10mA, IB=0
IC=1mA, IB=0
IE =1mA, IC=0
VCB=700V, IE=0
VCE=400V,IB=0
VEB=9V, IC=0
VCE =5V, IC=500mA
VCE =5V, IC=2A
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, TC=100°C
IC=2A, IB=0.5A
VCC=24V, IC=2A, IB1=-IB2=0.4A
VCE=10V, IC=0.5A
IF=1A
MIN
400
700
9
15
5
4
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
TYP MAX UNIT
V
V
V
100 μA
50 μA
10 μA
50
0.5
0.6
1
V
1
1.6 V
0.7 μs
4 μs
MHZ
1.5 V
E
40 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-379.f
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