MJD148T4 データシートの表示（PDF） - ON Semiconductor

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MJD148T4

NPN Silicon Power Transistor

ON Semiconductor 

MJD148

10

TJ = 150°C

5

3

2

TYPICAL CHARACTERISTICS

1

= 25°C

− 55°C

0.5

0.3

0.2

0.1

0.004

0.007 0.01

0.02 0.03 0.05

0.1

0.2 0.3

0.5

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

VCE = 2 V

VCE = 10 V

1

2

34

2

TJ = 25°C

1.6

1.2

IC = 10 mA

0.8

100 mA

1A

3A

0.4

0

0.05 0.07 0.1

0.2 0.3

0.5 0.7 1

2 3 5 7 10

IB, BASE CURRENT (mA)

20 30

Figure 2. Collector Saturation Region

50 70 100

200 300 500

2

TJ = 25°C

1.6

1.2

0.8

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2 V

0.4

VCE(sat) @ IC/IB = 10

0

0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1

IC, COLLECTOR CURRENT (A)

Figure 3. “On” Voltages

2 34

+ 2.5

+2

+ 1.5

*APPLIES FOR IC/IB ≤ hFE/2

*TJ = − 65°C to + 150°C

+1

+ 0.5

0

*qV for VCE(sat)

− 0.5

−1

− 1.5

−2

qV for VBE

− 2.5

0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1

IC, COLLECTOR CURRENT (A)

2 34

Figure 4. Temperature Coefficients

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