MGSF1N03LT3G データシートの表示（PDF） - TY Semiconductor
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MGSF1N03LT3G Datasheet PDF : 2 Pages
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Product specification
MGSF1N03L, MVGSF1N03L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mAdc)
V(BR)DSS
30
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS
−
−
IGSS
−
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
−
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 W)
td(on)
−
tr
−
td(off)
−
Fall Time
Gate Charge (See Figure 6)
tf
−
QT
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
Pulsed Current
ISM
−
Forward Voltage (Note 5)
VSD
−
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
−
−
Vdc
mAdc
−
1.0
−
10
−
±100
nAdc
1.7
2.4
Vdc
W
0.08
0.10
0.125
0.145
140
−
pF
100
−
40
−
2.5
−
ns
1.0
−
16
−
8.0
−
6000
−
pC
−
0.6
A
−
0.75
0.8
−
V
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