MC74VHCT125ADTR2 データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
MC74VHCT125ADTR2 Datasheet PDF : 6 Pages
| |||
MC74VHCT125A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (continued)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICCT
IOZ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOPD
Parameter
Quiescent Supply Current
Maximum 3−State Leakage
Current
Output Leakage Current
Test Conditions
Input: VIN = 3.4 V
VIN = VIH or VIL
VOUT = VCC or GND
VOUT = 5.5 V
VCC
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
(V) Min Typ Max Min Max Min Max Unit
5.5
1.35
1.50
1.65 mA
5.5
$0.2
$2.5
$2.5 mA
5
0.0
0.5
5.0
10 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
tPHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL,
tPZH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHZ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tOSLH,
tOSHL
Parameter
Maximum Propagation
Delay, A to Y
Maximum Output
Enable TIme,OE to Y
Maximum Output Dis-
able Time,OE to Y
Output−to−Output Skew
Test Conditions
VCC = 3.3 $ 0.3 V CL = 15 pF
CL = 50 pF
VCC = 5.0 $ 0.5 V CL = 15 pF
CL = 50 pF
VCC = 3.3 $ 0.3 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
VCC = 5.0 $ 0.5 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
VCC = 3.3 $ 0.3 V CL = 50 pF
RL = 1.0 kW
VCC = 5.0 $ 0.5 V CL = 50 pF
RL = 1.0 kW
VCC = 3.3 $ 0.3 V CL = 50 pF
(Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC=5.0$0.5V CL=50pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin Maximum Input Capaci-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cout MaximumThree−State
Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Output in High Imped-
ance State)
TA = 25°C
Min Typ Max
5.6 8.0
8.1 11.5
3.8 5.5
5.3 7.5
5.4 8.0
7.9 11.5
3.6 5.1
5.1 7.1
9.5 13.2
6.1 8.8
1.5
1.0
4
10
6
TA = ≤ 85°C
Min Max
1.0 9.5
1.0 13.0
1.0 6.5
1.0 8.5
1.0 9.5
1.0 13.0
1.0 6.0
1.0 8.0
1.0 15.0
1.0 10.0
1.5
1.0
10
TA ≤ 125°C
Min Max Unit
12.0 ns
16.0
8.5
10.5
11.5 ns
15.0
7.5
9.5
18.0 ns
12.0
2.0 ns
1.5
10 pF
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Typical @ 25°C, VCC = 5.0V
CPD Power Dissipation Capacitance (Note 2)
14
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
Symbol
VOLP
VOLV
VIHD
VILD
Characteristic
Quiet Output Maximum Dynamic VOL
Quiet Output Minimum Dynamic VOL
Minimum High Level Dynamic Input Voltage
Maximum Low Level Dynamic Input Voltage
TA = 25°C
Typ
Max
Unit
0.3
0.8
V
− 0.3
− 0.8
V
3.5
V
1.5
V
http://onsemi.com
3
Share Link: 