MC74VHC125D データシートの表示（PDF） - ON Semiconductor

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MC74VHC125D

Quad Bus Buffer

ON Semiconductor 

MC74VHC125

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol

Parameter

Value

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage

– 0.5 to + 7.0

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin DC Input Voltage

– 0.5 to + 7.0

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout DC Output Voltage

– 0.5 to VCC + 0.5 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IIK Input Diode Current

– 20

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOK Output Diode Current

± 20

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout DC Output Current, per Pin

± 25

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC DC Supply Current, VCC and GND Pins

± 50

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD Power Dissipation in Still Air,

SOIC Packages†

500

mW

TSSOP Package†

450

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature

– 65 to + 150

_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ * Absolute maximum continuous ratings are those values beyond which damage to the device

may occur. Exposure to these conditions or conditions beyond those indicated may

adversely affect device reliability. Functional operation under absolute–maximum–rated

conditions is not implied.

†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C

TSSOP Package: – 6.1 mW/_C from 65_ to 125_C

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high–impedance cir-

cuit. For proper operation, Vin and

Vout should be constrained to the

range GND v (Vin or Vout) v VCC.

Unused inputs must always be

tied to an appropriate logic voltage

level (e.g., either GND or VCC).

Unused outputs must be left open.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage

2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin

DC Input Voltage

0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout DC Output Voltage

0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA

Operating Temperature, All Package Types

– 40

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr, tf

Input Rise and Fall Time

VCC = 3.3V ±0.3V 0

VCC =5.0V ±0.5V 0

Max

5.5

5.5

VCC

+ 85

100

20

Unit

V

V

V

_C

ns/V

DC ELECTRICAL CHARACTERISTICS

VCC

TA = 25°C

TA ≤ 85°C

TA ≤ 125°C

Symbol

Parameter

Test Conditions

(V) Min Typ Max Min Max Min Max Unit

VIH

Minimum High–Level

Input Voltage

2.0 1.5

3.0 2.1

4.5 3.15

5.5 3.85

1.5

1.5

V

2.1

2.1

3.15

3.15

3.85

3.85

VIL

Maximum Low–Level

Input Voltage

2.0

0.5

0.5

0.5

V

3.0

0.9

0.9

0.9

4.5

1.35

1.35

1.35

5.5

1.65

1.65

1.65

VOH

Minimum High–Level VIN = VIH or VIL

2.0 1.9 2.0

1.9

1.9

V

Output Voltage

IOH = –50µA

3.0 2.9 3.0

2.9

2.9

VIN = VIH or VIL

4.5 4.4 4.5

4.4

4.4

VIN = VIH or VIL

IOH = –4mA

IOH = –8mA

3.0 2.58

4.5 3.94

V

2.48

2.34

3.80

3.66

VOL

Maximum Low–Level VIN = VIH or VIL

2.0

Output Voltage

IOL = 50µA

3.0

VIN = VIH or VIL

4.5

VIN = VIH or VIL

IOL = 4mA

3.0

IOL = 8mA

4.5

IOZ

Maximum 3–State

VIN = VIH or VIL

5.5

Leakage Current

VOUT = VCC or GND

0.0 0.1

0.1

0.0 0.1

0.1

0.0 0.1

0.1

0.36

0.44

0.36

0.44

±0.25

±2.5

0.1

V

0.1

0.1

V

0.52

0.52

±2.5 µA

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