33927 データシートの表示（PDF） - Freescale Semiconductor

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33927

Three-Phase Field Effect Transistor Pre-Driver

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 8.0V ≤ VPWR = VBAT ≤ 40V, -40°C ≤ TA ≤ 125°C, unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

CURRENT SENSE AMPLIFIER (CONTINUED)

Input Offset Current

IOS = IAMP_P - IAMP_N

Input Offset Current Drift (24)

Output Voltage

High-Level with RLOAD = 10 kΩ to VSS

Low-Level with RLOAD = 10 kΩ to VDD

Differential Input Resistance

Output Short Circuit Current

Common-Mode Input Capacitance at 10 kHz (24)(25)

Common-Mode Rejection Ratio at DC

CMRR = 20*Log ((VOUT_diff/VIN_diff) * (VIN_CM/VOUT_CM))

Large Signal Open Loop Voltage Gain (DC) (24)(25)

Gain Margin at Gain = 5.0 (24)(25)

Nonlinearity (24)(25)

RL = 1kΩ, CL = 500pF, 0.3 < VO < 4.8V, Gain = 5.0 to 15

IOS

-80

–

δIOS/δT

–

40

VOH

VOL

VDD-0.2

–

–

–

RI

1.0

–

ISC

5.0

–

CI

–

–

CMRR

60

80

AOL

–

60

AM

–

5.0

NL

-1.0

–

+80

nA

–

pA/°C

V

VDD

0.2

–

MΩ

–

mA

10

pF

–

dB

–

dB

–

dB

+1.0

%

Notes

24. This parameter is a design characteristic, not production tested.

25. Without considering any offsets such as input offset voltage, internal mismatch and assuming no tolerance error in external resistors.

Analog Integrated Circuit Device Data

Freescale Semiconductor

33927

11

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