Freescale Semiconductor, Inc.
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT
Output Drain-to-Source ON Resistance (IHS[0:1] = 30 A, TJ = 25°C)
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
RDS(ON)
–
–
–
mΩ
–
6.0
–
4.0
–
4.0
Output Drain-to-Source ON Resistance (IHS[0:1] = 30 A, TJ = 150°C)
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
RDS(ON)
–
–
–
mΩ
–
10.2
–
6.8
–
6.8
Output Source-to-Drain ON Resistance IHS[0:1] = 15 A, TJ = 25°C (Note 10)
RDS(ON)
VPWR = -12 V
–
mΩ
–
8.0
Output Overcurrent High Detection Levels (9.0 V < VPWR < 16 V)
SOCH = 0
SOCH = 1
Overcurrent Low Detection Levels (SOCL[2:0])
000
001
010
011
100
101
110
111
IOCH0
IOCH1
IOCL0
IOCL1
IOCL2
IOCL3
IOCL4
IOCL5
IOCL6
IOCL7
A
80
100
120
60
75
90
A
21
25
29
18
22.5
27
16
20
24
14
17.5
21
12
15
17
10
12.5
15
8.0
10
12
6.0
7.5
9.0
Current Sense Ratio (9.0 V < VPWR < 16 V, CSNS < 4.5 V)
DICR D2 = 0
DICR D2 = 1
Current Sense Ratio (CSR0) Accuracy
Output Current
5.0 A
10 A
12.5 A
15 A
20 A
25 A
CSR0
CSR1
–
–
1/20500
–
–
1/41000
–
CSR0_ACC
%
- 20
–
20
-14
–
14
-13
–
13
-12
–
12
-13
–
13
-13
–
13
Notes
10. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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