MAX8581ETB データシートの表示（PDF） - Maxim Integrated

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MAX8581ETB

2.5MHz/1.5MHz Step-Down Converters with 60mΩ Bypass in TDFN for CDMA PA Power

Maxim Integrated 

2.5MHz/1.5MHz Step-Down Converters

with 60mΩ Bypass in TDFN for CDMA PA Power

ELECTRICAL CHARACTERISTICS (continued)

(VIN = VSHDN = 3.6V, VREFIN = 0.9, VHP = VIC = 0V, TA = -40°C to +85°C, typical values are at TA = +25°C, unless otherwise noted.)

(Note 1)

PARAMETER

LX

On-Resistance

LX Leakage Current

p-Channel MOSFET Peak

Current Limit

SYMBOL

CONDITIONS

RONP

RONN

ILXLKG

ILIMP

p-channel MOSFET switch, ILX = -40mA

n-channel MOSFET rectifier, ILX = 40mA

VIN = 5.5V,

LX = GND

TA = +25°C

TA = +85°C

MIN TYP MAX UNITS

0.2

0.4

Ω

0.18 0.35

0.1

5

µA

1

700 1077 1400

mA

n-Channel MOSFET Valley

Current Limit

ILIMN

790

985 1150

mA

Minimum On- and Off-Times

tON/tOFF Ratio

Switching Frequency

BYPASS

tON(MIN)

tOFF(MIN)

tON(MIN) / tOFF(MIN)

MAX8581

MAX8582

70

114

150

ns

70

112

150

0.90 1.02 1.13

s/s

2.5

MHz

1.5

On-Resistance

Bypass Current Limit

RONBYP

p-channel MOSFET bypass,

IOUT = -400mA, TA = +25°C

0.06

0.1

Ω

p-channel MOSFET bypass, IOUT = -400mA

0.12

1.0

2.1

A

Step-Down Current Limit in

Bypass

700 1077 1400

mA

GENERAL

Thermal Shutdown

+160

°C

Thermal-Shutdown Hysteresis

20

°C

Power-Up Delay

VSHDN rising to VLX rising

50

130

µs

Note 1: All devices are 100% production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design.

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