MAX15035ETL データシートの表示（PDF） - Maxim Integrated

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MAX15035ETL

15A Step-Down Regulator with Internal Switches

Maxim Integrated 

MAX15035

15A Step-Down Regulator with Internal Switches

Electrical Characteristics 2 (continued)

(Circuit of Figure 1, VIN = 12V, VDD = VCC = VEN = 5V, REFIN = ILIM = REF, SKIP = GND. TA = -40°C to +85°C, unless otherwise

specified.) (Note 1)

FB Voltage Range

FB Voltage Accuracy

PARAMETER

REFERENCE

Reference Voltage

FAULT DETECTION

Output Overvoltage-Protection

Trip Threshold

VFB

VFB

SYMBOL

(Note 2)

Measured at FB, VREFIN = 0.5V

VIN = 4.5V to

VREFIN = 1.0V

26V, SKIP = VDD VREFIN = 2.0V

CONDITIONS

VREF

VDD = 4.5V to 5.5V

OVP

With respect to the internal target voltage

(error comparator threshold) rising edge;

hysteresis = 50mV

0

0.49

0.99

1.985

MIN

1.985

250

VREF

0.51

1.01

2.015

MAX

V

V

UNITS

2.015

V

350

mV

Output Undervoltage-Protection

Trip Threshold

UVP

With respect to the internal target voltage

(error comparator threshold);

falling edge; hysteresis = 50mV

-240

-160

mV

Output Undervoltage

Fault-Propagation Delay

PGOOD Output-Low Voltage

VCC Undervoltage Lockout

Threshold

CURRENT LIMIT

ILIM Input Range

Current-Limit Threshold

Ultrasonic Frequency

INPUTS AND OUTPUTS

EN Logic-Input Threshold

SKIP Quad-Level Input

Logic Levels

tUVP

FB forced 25mV below trip threshold

ISINK = 3mA

VUVLO(VCC)

Rising edge, PWM disabled below this level,

hysteresis = 100mV

80

3.95

0.4

VILIMIT

VILIM = 0.4V, VGND = VLX

ILIM = REF (2.0V), VGND - VLX

17

90

SKIP = open (3.3V), VFB = VREFIN + 50mV

17

VEN

V SKIP

EN rising edge hysteresis = 450mV (typ)

High (5V VDD)

Mid (3.3V)

Ref (2.0V)

Low (GND)

1.20

VCC -

0.4

3.0

1.7

400

µs

0.4

V

4.45

V

VREF

V

23

mV

110

kHz

2.20

V

3.6

V

2.3

0.4

Note 1: Limits are 100% production tested at TA = +25°C. Maximum and minimum limits over temperature are guaranteed by

design and characterization.

Note 2: The 0 to 0.5V range is guaranteed by design, not production tested.

Note 3: On-time and off-time specifications are measured from 50% point to 50% point at the unloaded LX node. The typical 25ns

dead time that occurs between the high-side driver falling edge (high-side MOSFET turn-off) and the low-side MOSFET

turnon) is included in the on-time measurement. Similarly, the typical 25ns dead time that occurs between the low-side

driver falling edge (low-side MOSFET turn-off) and the high-side driver rising edge (high-side MOSFET turn-on) is included

in the off-time measurement.

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