UT8Q512 データシートの表示（PDF） - Aeroflex UTMC

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UT8Q512

512K x 8 SRAM

Aeroflex UTMC 

VDD

E

DATA RETENTION MODE

50%

tEFR

VDR > 2.0V

50%

tR

Figure 7. Low VDD Data Retention Waveform

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(1 Second Data Retention Test)

SYMBOL

PARAMETER

VDR

VDD for data retention

IDDR 1,2

Data retention current

tEFR 1,3

Chip select to data retention time

tR1 ,3

Operation recovery time

Notes:

1. E = VDD - .2V, all other inputs = VDR or VSS.

2. Data retention current (ID D R) Tc = 25oC.

3. Not guaranteed or tested.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(10 Second Data Retention Test, Tc= -55oC to +125oC for (C) screening

SYMBOL

PARAMETER

V DD 1

tEFR2, 3

VDD for data retention

Chip select to data retention time

tR2, 3

Operation recovery time

Notes:

1. Performed at VDD (min) and VDD (max).

2. E = VSS, all other inputs = VDR or VSS.

3. Not guaranteed or tested.

MINIMUM

2.0

--

0

tAVAV

MAXIMUM UNIT

--

V

2.0

mA

ns

ns

MINIMUM

3.0

0

tAVAV

MAXIMUM UNIT

3.6

V

ns

ns

11

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