IRF510 データシートの表示（PDF） - Intersil

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IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

Intersil 

IRF510

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRF510

100

100

5.6

4

20

±20

43

0.29

19

-55 to 175

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250µA, (Figure 10)

100

-

-

V

Gate to Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA

2.0

-

4.0

V

Zero-Gate Voltage Drain Current

IDSS VDS = 95V, VGS = 0V

-

-

25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC

-

-

250

µA

On-State Drain Current (Note 2)

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)

5.6

-

-

A

Gate to Source Leakage Current

IGSS VGS = ±20V

-

-

±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A (Figures 8, 9)

-

0.4 0.54

Ω

Forward Transconductance (Note 2)

gfs

VGS = 50V, ID = 3.4A (Figure 12)

1.3 2.0

-

S

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

td(ON) ID ≈ 5.6A, RGS = 24Ω, VDD = 50V, RL = 9Ω,

-

8

12

ns

tr

VDD = 50V, VGS = 10V

-

MOSFET switching times are essentially independent

25

63

ns

td(OFF) of operating temperature

-

15

7

ns

Fall Time

tf

-

12

59

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS,

-

5.0

30

nC

IG(REF) = 1.5mA (Figure 14)

Qgs

Gate charge is essentially independent of operating

temperature.

-

2.0

-

nC

Qgd

-

3.0

-

nC

Input Capacitance

CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

135

-

pF

Output Capacitance

COSS

-

80

-

pF

Reverse-Transfer Capacitance

CRSS

-

20

-

pF

Internal Drain Inductance

LD

Measured From the

Modified MOSFET

Contact Screw On Tab To Symbol Showing the

Center of Die

Internal Devices

-

3.5

-

nH

Measured From the Drain Inductances

Lead, 6mm (0.25in) From

D

Package to Center of Die

LD

-

4.5

-

nH

Internal Source Inductance

LS

Measured From The

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

G

LS

S

-

7.5

-

nH

Junction to Case

Junction to Ambient

RθJC

RθJA

Free air operation

-

-

3.5 oC/W

-

-

80 oC/W

2

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