KM4212IC8 データシートの表示（PDF） - Fairchild Semiconductor
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KM4212IC8 Datasheet PDF : 10 Pages
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KM4212
DATA SHEET
KM4212 Electrical Characteristics (Vs = +5V, G = 2, RL = 10kΩ to Vs/2, Rf = 10kΩ; unless noted)
PARAMETERS
CONDITIONS
TYP
MIN & MAX UNITS
Case Temperature
+25°C
+25°C
NOTES
Frequency Domain Response
-3dB bandwidth
G = +1, Vo = 0.05Vpp
7.3
G = +2, Vo < 0.2Vpp
3.4
full power bandwidth
G = -1, Vo = 2Vpp
2.5
gain bandwidth product
4
MHz
1
MHz
MHz
MHz
Time Domain Response
rise and fall time
settling time to 0.1%
overshoot
slew rate
0.2V step
2V step
2V step,
2V step, G = -1
50
ns
600
ns
4
%
9
V/µs
Distortion and Noise Response
2nd harmonic distortion
3rd harmonic distortion
THD
input voltage noise
crosstalk
2Vpp, 100kHz
2Vpp, 100kHz
2Vpp, 100kHz
>10kHz
0.01MHz
67
dBc
60
dBc
59
dB
29
nV/√Hz
89
dB
DC Performance
input offset voltage
average drift
input bias current
average drift
input offset current
power supply rejection ratio
DC
open loop gain
quiescent current
1
mV
8
µV/°C
90
nA
100
pA/°C
1.3
nA
63
dB
76
dB
70
µA
Input Characteristics
input resistance
input capacitance
input common mode voltage range
common mode rejection ratio
Output Characteristics
output voltage swing
linear output current
short circuit output current
power supply operating range
DC, Vcm = 0V to Vs - 1.5
RL = 10kΩ to Vs/2
RL = 2kΩ to Vs/2
>10
MΩ
1.25
pF
-0.3 to 3.8
V
97
dB
0.04 to 4.96
V
0.09 to 4.9
V
±4
mA
±9
mA
5
2.5 to 5.5
V
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.
NOTES:
1) For G = +1, Rf = 0.
REV. 1 August 2001
3
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