IS62WV10248BLL-70BI データシートの表示（PDF） - Integrated Silicon Solution

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IS62WV10248BLL-70BI

1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV10248BLL

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

IS62WV10248BLL

Symbol Parameter

Test Conditions

ICC

VDDDynamicOperating VDD=Max.,

Com.

Supply Current

ICC1

Operating Supply

Current

IOUT = 0 mA, f = fMAX

VDD = Max., CS1 = 0.2V

WE = VDD -0.2V

Ind.

Com.

Ind.

CS2 = VDD -0.2V, f = 1MHz

ISB1

TTL Standby Current

VDD = Max.,

Com.

(TTL Inputs)

VIN = VIH or VIL

Ind.

CS1 = VIH , CS2 = VIL,

f = 1 MHZ

Max. Max.

55

70

30

25

35

30

5

5

5

5

0.3

0.3

0.3

0.3

ISB2

CMOS Standby

VDD = Max.,

Current(CMOSInputs) CS1≥ VDD–0.2V,

CS2 ≤ 0.2V,

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

typ.(1)

20

20

25

25

3

3

Note:

1. Typical Values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.

ISSI ®

Unit

mA

mA

mA

µA

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. C

03/17/06

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