IRF630M データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

IRF630M

N-channel 200V - 0.35Ω- 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET

STMicroelectronics 

IRF630M

IRF630MFP

N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP

Mesh Overlay™ Power MOSFET

General features

Type

VDSS

(@Tjmax)

RDS(on)

ID

IRF630M

IRF630MFP

200 V

200 V

< 0.40 Ω 9 A

< 0.40 Ω 9 A

■ Extremely high dv/dt capability

■ Very low intrinsic capacitances

■ Gate charge minimized

Description

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources. Isolated TO-

220 option simplifies assembly and cuts risk of

accidental short circuit in crowded monitor PCB’s.

Applications

■ Switching application

3

2

1

TO-220

3

2

1

TO-220FP

Internal schematic diagram

Order codes

Part number

IRF630M

IRF630MFP

Marking

IRF630M

IRF630MFP

Package

TO-220

TO-220FP

Packaging

Tube

Tube

June 2006

Rev 2

1/14

www.st.com

14

Share Link: