HD64F3029X25W データシートの表示（PDF） - Renesas Electronics

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HD64F3029X25W

16-Bit Single-Chip Microcomputer

Renesas Electronics 

Item

21.3.2 DC Characteristics

Table 21.22 DC Characteristics

Page

745, 746

Revision (See Manual for Details)

Table and note amended

Item

Current

dissipation*2

Normal

operation

Symbol Min

ICC*3

—

Sleep mode

—

Module

—

standby mode

Flash memory

—

programming/

erasing*4

Analog power During A/D AI

—

CC

supply current conversion

During A/D

—

and D/A

conversion

Typ

Max

20(3.3V) 38

17(3.3V) 35

16(3.3V) 34

30(3.3V) 48

0.6

1.5

0.6

1.5

Test

Unit Conditions

mA f = 25 MHz

mA f = 25 MHz

mA f = 25 MHz

mA f = 25 MHz

(reference

values)

mA

mA

Item

Symbol Min

Reference current During A/D

AICC

—

conversion

During A/D and

—

D/A conversion

RAM standby voltage

VRAM

3.0

Typ Max

0.25 0.8

1.2

3.0

—

—

21.3.4 A/D Conversion

755

Characteristics

Table 21.28 A/D Conversion

Characteristics

*3 ICC max. (normal operation)= 11 (mA) + 0.13

(mA/(MHz × V)) × VCC × f

I max. (sleep mode)= 11 (mA) + 0.11

CC

(mA/(MHz

×

V))

×

V

CC

×

f

ICC max. (sleep mode + module standby mode) =

11 (mA) + 0.10 (mA/(MHz × V)) × VCC × f

Table amended

Item

Conver-

sion time:

134 states

Nonlinearity error

Offset error

Full-scale error

Quantization error

Absolute accuracy

Max

±3.5

±3.5

±3.5

±0.5

±4.0

Item

Conver- Nonlinearity error

sion time*: Offset error

70 states

Full-scale error

Quantization error

Absolute accuracy

Max

±7.5

±7.5

±7.5

±0.5

±8.0

Rev. 2.0, 06/04, page viii of xxiv

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