HAF2011(L) データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HAF2011(L)

Silicon N Channel MOS FET Series Power Switching

Hitachi -> Renesas Electronics 

HAF2011(L),HAF2011(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

Typical Operation Characteristics

Item

Input voltage

Input current

(Gate non shut down)

Input current

(Gate non shut down)

Shut down temperature

Gate operation voltage

Symbol

VIH

VIL

I IH1

I IH2

I IL

I IH(sd)1

I IH(sd)2

Tsd

VOP

Min

3.5

—

—

—

—

—

—

—

3.5

Typ

—

—

—

—

—

0.8

0.35

175

—

Ratings

60

16

–2.5

40

80

40

50

150

–55 to +150

Max Unit

—

V

1.2

V

100

µA

50

µA

1

µA

—

mA

—

mA

—

°C

12

V

Unit

V

V

V

A

A

A

W

°C

°C

Test Conditions

Vi = 8V, VDS = 0

Vi = 3.5V, VDS = 0

Vi = 1.2V, VDS = 0

Vi = 8V, VDS = 0

Vi = 3.5V, VDS = 0

Channel temperature

2

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