HA-2510 データシートの表示（PDF） - Intersil
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HA-2510 Datasheet PDF : 7 Pages
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Die Characteristics
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
40
PROCESS: Bipolar Dielectric Isolation
HA-2510/883
Metallization Mask Layout
HA-2510/883
+IN
-IN
BAL
COMP
V-
Burn-In Circuit
V+
BAL
OUT
HA7-2510/883
R1
V-
D2
1
2-
3+
4
C2
R1 = 1MΩ, ±5%, 1/4W (Min)
C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
C3 = 0.01µF/Socket (10%)
D1 = D2 = 1N4002 or Equivalent/Board
|(V+) - (V-)| = 30V
5
8
7
6
C3
5
V+
C1
D1
FN3697.4
January 3, 2006
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