GS881E18BGD-150T データシートの表示（PDF） - Giga Semiconductor

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GS881E18BGD-150T

512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

Giga Semiconductor 

GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)

Flow Through Mode Timing (DCD)

Begin

CK

Read A

Cont

Deselect Write B

tKL

tKH

tKC

Read C

Read C+1 Read C+2 Read C+3 Read C

Deselect

ADSP

ADSC

ADV

Ao–An

GW

BW

Ba–Bd

E1

E2

E3

tS

tH

tH

tS

Fixed High

tS

AtHDSC initiated read

tS

tS

tH

A

tS

tH

B

C

tS

tH

tH

tS

tS

tH

tS

tH E2 and E3 only sampled with ADSP and ADSC

tS

tH

E1 masks ADSP

E1 masks ADSP

tH

Deselected with E1

G

DQa–DQd

tOE

tKQ

tH

tS

tOHZ

tLZ

Q(A)

D(B)

Q(C)

Q(C+1) Q(C+2) Q(C+3)

Q(C)

tKQX

tHZ

Rev: 1.04 3/2005

23/40

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2002, GSI Technology

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