GFP60N03 データシートの表示（PDF） - General Semiconductor
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GFP60N03 Datasheet PDF : 5 Pages
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GFP60N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
1.15
ID = 250µA
1.1
Fig. 11 – Transient Thermal
Impedance
1
1.05
1
0.95
0.9
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
RθJC = 2.0°C/W
800
TC = 25°C
600
400
200
0
0.0001 0.001
0.01
0.1
1
10
Pulse Duration (sec.)
0.1
1. Duty Cycle, D = t1/ t2
2. RθJC(t) = RθJC(norm) *RθJC
3. RθJC = 2.0°C/W
4. TJ -- TC = PDM* RθJC(t)
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Duration (sec.)
Fig. 13 – Maximum Safe Operating Area
1000
100
100µs
10ms1ms
10
RDS(ON) Limit
VGS = 10V
Single Pulse
100ms
RθJC = 2.0°C/W
DC
TC = 25°C
1
0.1
1
10
100
VDS -- Drain-Source Voltage (V)
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