FS6S0965R データシートの表示（PDF） - Fairchild Semiconductor

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FS6S0965R

Fairchild Power Switch(SPS)

Fairchild Semiconductor 

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R

Electrical Characteristics (SFET Part; Continued)

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

FS6S15658R

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=50µA

650 -

-

V

VDS=Max., Rating, VGS=0V -

- 200 µA

Zero Gate Voltage Drain Current

Static Drain-Source On Resistance (1)

Forward transconductance(1)

IDSS

RDS(on)

gfs

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

VGS=10V, ID=4.5A

VDS=50V, ID=4.5A

-

- 300 µA

-

0.5 0.65 Ω

-

-

-

S

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

Coss

Crss

VGS=0V, VDS=25V,

f = 1MHz

- 2590 -

- 270 -

pF

-

50

-

Turn on delay time

Rise time

Turn off delay time

Fall time

td(on)

tr

td(off)

tf

VDD=0.5BVDSS, ID=15.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

-

50

-

- 155 -

- 270 -

nS

- 125 -

Total gate charge

(gate-source+gate-drain)

Gate-source charge

Gate-drain (Miller) charge

Qg

VGS=10V, ID=15.0A,

VDS=0.5BVDSS(MOSFET

-

90

-

Qgs

Switching time are

-

15

-

Essentially independent of

nC

Qgd Operating temperature)

-

45

-

Note:

(1) Pulse Test : Pulse width ≤300uS, Duty Cycle ≤ 2 %

(2) S = -1--

R

5

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