FEP30AP データシートの表示（PDF） - Vishay Semiconductors
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FEP30AP Datasheet PDF : 4 Pages
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FEP30AP thru FEP30JP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum instantaneous
forward voltage per diode
15.0 A
VF
0.95
1.3
1.5
V
Maximum DC reverse current TC = 25 °C
at rated DC blocking voltage
IR
per diode
TC = 100 °C
Maximum reverse recovery
time per diode
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
10
500
35
175
μA
50
ns
145
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
Typical thermal resistance per diode
RθJC (1)
1.0
Note
(1) Thermal resistance from junction to case per diode mounted on heatsink
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
FEP30JP-E3/45
6.15
PACKAGE CODE
30
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
36
Resistive or Inductive Load
30
24
12
6
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
300
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88597
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 08-Apr-10
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