FDS9933BZ データシートの表示（PDF） - Fairchild Semiconductor
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FDS9933BZ Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
4.5
ID = -4.9A
4.0
3.5
VDD = -5V
3.0
2.5
VDD = -10V
2.0
VDD = -15V
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
3000
1000
100
Ciss
Coss
Crss
f = 1MHz
VGS = 0V
10
0.1
1
10 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
10
8
6
4
TJ = 25oC
TJ = 125oC
2
1
0.01
0.1
1
10 30
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
50
10
100µs
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
1
1ms
10ms
100ms
1s
10s
DC
10
50
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
105
104
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
103
102
VGS = 0V
101
100
TJ = 125oC
10-1
10-2
10-3
TJ = 25oC
10-4
0
4
8
12
16
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Gate Leakage Current
vs Gate to Sourse Voltage
100
VGS = -10V
10
SINGLE PULSE
RθJA = 135oC/W
1
TA = 25oC
0.5
10-3
10-2
10-1
100
101
100
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2008 Fairchild Semiconductor Corporation
4
FDS9933BZ Rev.C
www.fairchildsemi.com
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