FDD603AL データシートの表示（PDF） - Fairchild Semiconductor
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FDD603AL Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
10
I D = 10A
8
6
VDS = 5.0V
10V
20V
4
2
0
0
5
10
15
20
Q g , GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
2000
1000
500
Ciss
Coss
200
100
f = 1 MHz
VGS = 0V
Crss
60
0.1
0.3
1
4
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
200
100
50
Limit
20
R DS(ON)
5
1
VGS = 10V
0.1
SINGLE PULSE
RθJC= 3.2o C/W
TA = 25 °C
1µs
1001µ0sµs
1ms
10ms
DC
0.01
0.1
1
35
10
V DS , DRAIN-SOURCE VOLTAGE (V))
30 50
60
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
40
20
0
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 9. Maximum Safe Operating Area.
1
0.1
0.01
0.001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
R θJA (t) = r(t) * R θJA
R θJA = 96°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDD603AL, Rev. B
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