FDP6670S データシートの表示（PDF） - Fairchild Semiconductor
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FDP6670S Datasheet PDF : 6 Pages
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6670S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.01
0.001
TA = 100oC
TIME: 12.5ns/div
Figure 12. FDP6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6670A).
0.0001
0.00001
0
o
TA = 25 C
10
20
30
VDS, REVERSE VOLTAGE (V)
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body
diode reverse recovery characteristic.
FDP6670S/FDB6670S Rev E (W)
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