EDS1232AATA-MI データシートの表示（PDF） - Elpida Memory, Inc
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EDS1232AATA-MI Datasheet PDF : 53 Pages
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EDS1232AATA-MI
Pin Capacitance (TA = 25°C, f = 1MHz)
Parameter
Symbol Pins
min.
typ.
max.
Unit Notes
Input capacitance
CI1
Address
2.5
—
4.0
pF
CI2
CLK, CKE, /CS, /RAS,
/CAS, /WE, DQM
2.5
—
4.0
pF
Data input/output capacitance CI/O
DQ
4.0
—
6.5
pF
AC Characteristics (TA = –40 to +85°C, VDD, VDDQ = 3.3V±0.3V, VSS, VSSQ = 0V)
Parameter
ESystem clock cycle time
(CL = 2)
(CL = 3)
CLK high pulse width
OCLK low pulse width
Access time from CLK
Data-out hold time
L CLK to Data-out low impedance
-75
Symbol
min.
tCK
10
tCK
7.5
tCH
2.5
tCL
2.5
tAC
—
tOH
2
tLZ
0
max.
—
—
—
—
5.4
—
—
Unit
Notes
ns
ns
ns
ns
ns
ns
ns
CLK to Data-out high impedance
tHZ
2
5.4
ns
Input setup time
tSI
1.5
—
ns
Input hold time
tHI
0.8
—
ns
CKE setup time (Power down exit)
tCKSP
1.5
—
ns
ACT to REF/ACT command period
P (operation)
tRC
67.5
⎯
ns
(refresh)
tRC
67.5
⎯
ns
Active to Precharge command period
tRAS
45
120000
ns
Active command to column command (same
bank)
tRCD
20
⎯
ns
r Precharge to active command period
tRP
20
⎯
ns
Write recovery or data-in to precharge
o lead time
tDPL
15
⎯
ns
Last data into active latency
tDAL
2CLK + 20ns
⎯
Active (a) to Active (b) command period
tRRD
15
⎯
ns
d Mode register set cycle time
tRSC
2
⎯
CLK
Transition time (rise and fall)
tT
0.5
30
ns
Refresh period
uct (4096 refresh cycles)
tREF
—
64
ms
Data Sheet E0340E30 (Ver. 3.0)
6
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