DTC114EET1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation,
PD
FR–4 Board (1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (1.)
RθJA
Total Device Dissipation,
PD
FR–4 Board (2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (2.)
RθJA
Junction and Storage Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
ICBO
ICEO
IEBO
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector–Emitter Breakdown Voltage (3.) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (3.)
V(BR)CBO
V(BR)CEO
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTC114EET1
hFE
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTC123EET1
(IC = 10 mA, IB = 1 mA) DTC143TET1
DTC143ZET1/DTC124XET1
VCE(sat)
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTC114EET1
DTC124EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) DTC144EET1
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Max
200
1.6
600
300
2.4
400
–55 to +150
Min
—
—
—
—
—
—
—
—
—
—
—
—
50
50
35
60
80
80
160
8.0
15
80
80
80
—
—
—
—
—
—
—
—
—
—
—
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
60
100
140
140
350
15
30
200
150
140
—
—
—
—
—
—
—
—
—
—
—
Max
100
500
0.5
0.2
0.1
0.2
1.9
2.3
1.5
0.18
0.13
0.2
—
—
—
—
—
—
—
—
—
—
—
—
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
http://onsemi.com
2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc