DS28E25P(2012-7) データシートの表示（PDF） - Maxim Integrated
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DS28E25P Datasheet PDF : 6 Pages
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ABRIDGED DATA SHEET
DS28E25
1-Wire SHA-256 Secure Authenticator
with 4Kb User EEPROM
ABSOLUTE MAXIMUM RATINGS
IO Voltage Range to GND....................................... -0.5V to 4.0V
IO Sink Current....................................................................20mA
Operating Temperature Range .......................... -40NC to +85NC
Junction Temperature......................................................+150NC
Storage Temperature Range............................. -55NC to +125NC
Lead Temperature (TDFN, TSOC only; soldering, 10s)...+300NC
Soldering Temperature (TDFN, TSOC only; reflow) ........+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(TA = -40NC to +85NC, unless otherwise noted.) (Note 1)
PARAMETER
IO PIN: GENERAL DATA
SYMBOL
CONDITIONS
1-Wire Pullup Voltage
1-Wire Pullup Resistance
Input Capacitance
Input Load Current
VPUP
RPUP
CIO
IL
(Note 2)
VPUP = 3.3V Q 10% (Note 3)
(Notes 4, 5)
IO pin at VPUP
High-to-Low Switching Threshold
VTL
(Notes 6, 7)
Input Low Voltage
VIL
(Notes 2, 8)
Low-to-High Switching Threshold
VTH
(Notes 6, 9)
Switching Hysteresis
VHY
(Notes 6, 10)
Output Low Voltage
VOL
IOL = 4mA (Note 11)
Recovery Time
tREC RPUP = 1500I (Notes 2, 12)
Time-Slot Duration
tSLOT (Notes 2, 13)
IO PIN: 1-Wire RESET, PRESENCE-DETECT CYCLE
Reset Low Time
Reset High Time
Presence-Detect Sample Time
IO PIN: 1-Wire WRITE
tRSTL
tRSTH
tMSP
(Note 2)
(Note 14)
(Notes 2, 15)
Write-Zero Low Time
Write-One Low Time
IO PIN: 1-Wire READ
tW0L
tW1L
(Notes 2, 16)
(Notes 2, 16)
Read Low Time
Read Sample Time
EEPROM
tRL
tMSR
(Notes 2, 17)
(Notes 2, 17)
Programming Current
Programming Time for a 32-Bit
Segment
IPROG
tPROG
VPUP = 3.63V (Notes 5, 18)
(Note 19)
Write/Erase Cycling Endurance
Data Retention
NCY TA = +85NC (Notes 20, 21)
tDR
TA = +125NC (storage) (Notes 22, 23, 24)
MIN TYP MAX UNITS
2.97
3.63
V
300
1500
I
1500
pF
5
19.5
FA
0.65 x
VPUP
V
0.3
V
0.75 x
VPUP
V
0.3
V
0.4
V
5
Fs
13
Fs
48
80
Fs
48
Fs
8
10
Fs
8
16
Fs
1
2
Fs
1
tRL + d
100k
10
2-d
Fs
2
Fs
1
mA
10
ms
—
Years
2
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