GLT4160L16-60TC データシートの表示（PDF） - G-Link Technology

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GLT4160L16-60TC

1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G-Link Technology  

G-LINK

GLT4160L16

1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Mar 2000 (Rev.2.0)

Features :

∗ 1,048,576 words by 16 bits organization.

∗ Fast access time and cycle time.

∗ Dual CAS Input.

∗ Low power dissipation.

∗ Read-Modify-Write, RAS -Only Refresh,

CAS -Before-RAS Refresh, Hidden

Refresh and Test Mode Capability.

∗ 1024 refresh cycles per 16ms.

∗ Available in 400 mil SOJ / TSOPII

Packages.

∗ Single 3.3V±0.3V Power Supply.

∗ All inputs and Outputs are TTL

compatible.

∗ Extended Data-Out(EDO) Page Mode

operation.

∗ Self – refresh capability. (S-Version).

Description :

The GLT4160L16 is a 1,048,576 x 16 bit

high-performance CMOS dynamic random

access memory. The GLT4160L16 offers

Fast Page mode with Extended Data Output,

and has both BYTE WRITE and WORD

WRITE access cycles via two CAS pins. The

GLT4160L16 has symmetric address and

accepts 1024-cycle refresh in 16ms interval.

All inputs are TTL compatible. EDO

Page Mode operation allows random access

up to 1024 x 16 bits within a page, with cycle

times as short as 13ns.

The GLT4160L16 is best suited for

graphics, and DSP applications requiring

high performance memories.

HIGH PERFORMANCE

Max. RAS Access Time, (tRAC)

Max. Column Address Access Time, (tCAA)

Min. Extended Data Out Page Mode Cycle Time, (tPC)

Min. Read/Write Cycle Time, (tRC)

Max. CAS Access Time (tCAC)

35

35 ns

40

40 ns

50

50 ns

60

60 ns

18 ns 20 ns 25 ns 30 ns

13 ns 15 ns 20 ns 25 ns

65 ns 70 ns 85 ns 104 ns

11 ns 12 ns 14 ns 15 ns

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-1-

G-Link Technology Corporation,Taiwan

6F, No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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