CY7C1350G-250BGC データシートの表示（PDF） - Cypress Semiconductor
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CY7C1350G-250BGC Datasheet PDF : 15 Pages
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CY7C1350G
Switching Characteristics Over the Operating Range[17, 18]
–250
–200
–166
–133
–100
Parameter
tPOWER
Clock
Description
VDD (typical) to the first Access[13]
Min.
1
Max.
Min.
1
Max.
Min.
1
Max. Min. Max. Min. Max. Unit
1
1
ms
tCYC
Clock Cycle Time
tCH
Clock HIGH
tCL
Clock LOW
Output Times
4.0
5.0
6.0
7.5
10
ns
1.7
2.0
2.5
3.0
3.5
ns
1.7
2.0
2.5
3.0
3.5
ns
tCO
tDOH
tCLZ
tCHZ
tOEV
tOELZ
tOEHZ
Data Output Valid After CLK Rise
2.6
2.8
3.5
4.0
4.5 ns
Data Output Hold After CLK Rise 1.0
1.0
1.5
1.5
1.5
ns
Clock to Low-Z[14, 15, 16]
0
0
0
0
0
ns
Clock to High-Z[14, 15, 16]
2.6
2.8
3.5
4.0
4.5 ns
OE LOW to Output Valid
2.6
2.8
3.5
4.0
4.5 ns
OE LOW to Output Low-Z[14, 15, 16] 0
0
0
0
0
ns
OE HIGH to Output High-Z[14, 15,
16]
2.6
2.8
3.5
4.0
4.5 ns
Set-up Times
tAS
Address Set-up Before CLK Rise 1.2
1.2
1.5
1.5
1.5
ns
tALS
ADV/LD Set-up Before CLK Rise 1.2
1.2
1.5
1.5
1.5
ns
tWES
GW, BWX Set-Up Before CLK Rise 1.2
1.2
1.5
1.5
1.5
ns
tCENS
CEN Set-up Before CLK Rise
1.2
1.2
1.5
1.5
1.5
ns
tDS
Data Input Set-up Before CLK Rise 1.2
1.2
1.5
1.5
1.5
ns
tCES
Chip Enable Set-Up Before CLK 1.2
1.2
1.5
1.5
1.5
ns
Rise
Hold Times
tAH
Address Hold After CLK Rise
0.3
0.5
0.5
0.5
0.5
ns
tALH
ADV/LD Hold after CLK Rise
0.3
0.5
0.5
0.5
0.5
ns
tWEH
GW, BWX Hold After CLK Rise
0.3
0.5
0.5
0.5
0.5
ns
tCENH
CEN Hold After CLK Rise
0.3
0.5
0.5
0.5
0.5
ns
tDH
Data Input Hold After CLK Rise
0.3
0.5
0.5
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise 0.3
0.5
0.5
0.5
0.5
ns
Notes:
13. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a Read or Write operation
can be initiated.
14. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve tri-state prior to Low-Z under the same system conditions.
16. This parameter is sampled and not 100% tested.
17. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
18. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05524 Rev. *F
Page 9 of 15
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