FRE9160R データシートの表示（PDF） - Intersil
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FRE9160R Datasheet PDF : 6 Pages
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FRE9160D, FRE9160R, FRE9160H
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source
(Note 4, 6)
BVDSS FRE9160D, R
VGS = 0, ID = 1mA
-100
-
V
Breakdown Volts
(Note 5, 6)
BVDSS FRE9160H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
(Note 4, 6)
VGS(th) FRE9160D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
Threshold Volts
(Note 3, 5, 6) VGS(th) FRE9160H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
(Note 4, 6)
IGSSF FRE9160D, R
VGS = -20V, VDS = 0
-
Leakage Forward
(Note 5, 6)
IGSSF FRE9160H
VGS = -20V, VDS = 0
-
100
nA
200
nA
Gate-Body
(Note 2, 4, 6) IGSSR FRE9160D, R
VGS = 20V, VDS = 0
-
100
nA
Leakage Reverse
(Note 2, 5, 6) IGSSR FRE9160H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage (Note 4, 6)
IDSS
FRE9160D, R
VGS = 0, VDS = -80V
-
Drain Current
(Note 5, 6)
IDSS
FRE9160H
VGS = 0, VDS = -80V
-
25
µA
100
µA
Drain-Source
(Note 1, 4, 6) VDS(on) FRE9160D, R
VGS = -10V, ID = 30A
-
On-State Volts
(Note 1, 5, 6) VDS(on) FRE9160H
VGS = -16V, ID = 30A
-
-2.99
V
-4.49
V
Drain-Source
(Note 1, 4, 6) RDS(on) FRE9160D, R
VGS = -10V, ID = 19A
-
0.095
Ω
On Resistance
(Note 1, 5, 6) RDS(on) FRE9160H
VGS = -14V, ID = 19A
-
0.143
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/8/90 on TA17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application Note AN8831, Oct. 1988
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