CHA3093C データシートの表示（PDF） - United Monolithic Semiconductors
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CHA3093C Datasheet PDF : 10 Pages
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20-40GHz Medium Power Amplifier
CHA3093c
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA
Symbol
Parameter
Min Typ
Fop
Operating frequency range (1)
20
G
Small signal gain [ 20GHz to 35GHz](1)
20
22
G
Small signal gain (1)
18
∆G
Small signal gain flatness (1) (Any 1GHz BW)
±0.5
Is
Reverse isolation (1)
50
P1dB
Pulsed output power at 1dB gain compression (1) 18
20
P3dB
Pulsed output power at 3dB gain compression (1) 20
22
Max
40
Unit
GHz
dB
dB
dB
dB
dBm
dBm
IP3
3rd order intercept point
29
dBm
PAE
Power added efficiency at saturation
10
%
VSWRin Input VSWR (1)
1.2:1 2.0:1
VSWRout Output VSWR (1)
2.0:1 3.0:1
NF
Noise figure
8.0
10.0
dB
Vdet
Id
Detected voltage : at 25GHz @ Pout=20dBm (2)
Detected voltage : at 38GHz @ Pout=20dBm (2)
Bias current (small signal)
0.65
V
0.45
V
330
400
mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF
ports.
(2)
In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less.
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Vds
Drain bias voltage_small signal (2)
4.0
Ids
Drain bias current_small signal
470
Vgs
Gate bias voltage
-2 to +0.4
Vdg
Drain Gate voltage (Vds – Vgs)
+5
Pin
Maximum continuous input power (2)
Maximum peak input power overdrive
+4 (@ 20GHz)
-1 (@ 40GHz)
+15
Ta
Operating temperature range
-40 to +85
Tstg
Storage temperature range
-55 to +125
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Unit
V
mA
V
V
dBm
dBm
°C
°C
Ref. : DSCHA30932158 -07-June-02
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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