BUZ 341
Power dissipation
Ptot = ƒ(TC)
180
W
Ptot 140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
A
I
D 10 2
10 1
/ID
= V DS
R DS(on)
tp = 350.0ns
1 µs
10 µs
100 µs
1 ms
10 ms
10 0
DC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
34
A
28
ID
24
20
16
12
8
4
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
K/W
Z
thJC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -1
10 0
10 1
10 2
V
VDS
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96